STF10NM60N Datasheet, ST Microelectronics

Order code VDS RDS(on) max. ID STF10NM60N 600 V 550 mΩ 10 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistan.

* Switching applications Description This device is an N-channel Power MOSFET developed using the second generati.